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| 25F(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 25 A FEATURES * High surge current capability * Stud cathode and stud anode version * Wide current range * Types up to 1200 V VRRM * RoHS compliant RoHS COMPLIANT TYPICAL APPLICATIONS DO-203AA (DO-4) * Battery charges * Converters PRODUCT SUMMARY IF(AV) 25 A * Power supplies * Machine tool controls MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) IFSM I2 t VRRM TJ 50 Hz 60 Hz 50 Hz 60 Hz Range TEST CONDITIONS VALUES 25 TC 120 40 356 373 636 580 100 to 1200 - 65 to 175 UNITS A C A A A2 s V C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 100 200 400 600 800 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 150 275 500 725 950 1200 1400 VR(BR), MINIMUM AVALANCHE VOLTAGE V (1) 500 750 950 1150 1350 12 IRRM MAXIMUM AT TJ = 175 C mA 10 20 40 25F(R) 60 80 100 120 Note (1) Avalanche version only available from V RRM 400 V to 1200 V Document Number: 93506 Revision: 29-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 25F(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 25 A FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current Maximum on-repetitive peak reverse power SYMBOL IF(AV) IF(RMS) PR(1) 10 s square pulse, TJ = TJ maximum t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied TEST CONDITIONS 180 conduction, half sine wave VALUES 25 120 40 10 356 373 300 Sinusoidal half wave, initial TJ = TJ maximum 314 636 580 450 410 6360 0.80 0.90 6.80 m (I > x IF(AV)), TJ = TJ maximum Ipk = 78 A, TJ = 25 C, tp = 400 s rectangular wave 5.70 1.30 V A2s V A2s A UNITS A C A K/W t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop Note (1) Available only for avalanche version, all other parameters the same as 25F THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Not lubricated threads Allowable mounting torque Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 65 to 175 - 65 to 200 1.5 K/W 0.5 1.5 + 0 - 10 % (13) 1.2 + 0 - 10 % (10) 7 0.25 N*m (lbf * in) N*m (lbf * in) g oz. UNITS C DO-203AA (DO-4) www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93506 Revision: 29-Sep-08 25F(R) Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 25 A RthJC CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.28 0.39 0.50 0.73 1.20 RECTANGULAR CONDUCTION 0.24 0.41 0.54 0.75 1.21 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 180 170 160 150 Conduction Angle 180 170 160 150 Conduction Period 25F(R) Series RthJC (DC) = 1.5 K/W 25F(R) Series RthJC (DC) = 1.5 K/W 140 130 120 110 30 100 0 5 10 15 20 25 30 Average Forward Current (A) 60 90 120 180 140 130 120 110 100 0 5 10 15 20 25 30 35 40 45 Average Forward Current (A) 30 90 60 120 180 DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) 35 30 25 20 15 Conduction Angle 180 120 90 60 30 RMS Limit R th 3 K/ W 4K /W 2 W K/ SA =1 W K/ aR elt -D 6K /W 8K /W 12 K /W 10 5 0 0 5 10 15 20 25 25F(R) Series T = 175C J 20 K/W 40 K/W 30 0 25 50 75 100 125 150 175 Average Forward Current (A) Maximum Allowable Ambient Temperature (C) Fig. 3 - Forward Power Loss Characteristics Document Number: 93506 Revision: 29-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 25F(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 25 A Maximum Average Forward Power Loss (W) 25 DC 180 120 90 60 30 R 20 6K /W th SA = RMS Limit 8K /W 10 K /W 4K /W -D elt aR 15 10 Conduction Period 15 K/W 20 K/W 5 30 K/W 16F(R) Series T = 175C J 0 5 10 15 20 25 30 0 25 50 75 100 0 Average Forward Current (A) Maximum Allowable Ambient Temperature (C) Fig. 4 - Forward Power Loss Characteristics Peak Half Sine Wave Forward Current (A) 350 300 250 200 150 100 50 1 Instantaneous Forward Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial T = 175C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1000 100 T = 25C J T = 175C J 10 25F(R) Series 25F(R) Series 1 0 0.5 1 1.5 2 2.5 3 3.5 4 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Instantaneous Forward Voltage (V) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics Peak Half Sine Wave Forward Current (A) Transient Thermal Impedance ZthJC (K/W) 400 350 300 250 200 150 100 50 0 0.01 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 175C No Voltage Reapplied Rated V RRM Reapplied 10 Steady State Value RthJC = 1.5 K/W (DC Operation) 1 25F(R) Series 25F(R) Series 0.1 0.001 0.1 1 10 0.01 0.1 1 10 Pulse Train Duration (s) Square Wave Pulse Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93506 Revision: 29-Sep-08 25F(R) Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 25 A ORDERING INFORMATION TABLE Device code 25 1 1 2 3 - F 2 R 3 120 4 M 5 Current rating: Code = IF(AV) F = Standard device None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 4 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) None = Stud base DO-203AA (DO-4) 10-32UNF-2A M = Stud base DO-203AA (DO-4) M5 X 0.8 (not available for avalanche diodes) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95311 Document Number: 93506 Revision: 29-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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